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TT: Fachverband Tiefe Temperaturen

TT 35: Postersession Transport: Nanoelectronics, Quantum Coherence and Quantum Information, Fluctuations and Noise

TT 35.5: Poster

Mittwoch, 25. März 2009, 14:00–18:00, P1A

Towards quantum dots on GaAs nanowires — •Johannes Mösl¹, Anna Fontcuberta i Morral^2,3, and Stefan Ludwig¹ — ¹Fakultät für Physik and Center for NanoScience, LMU Munich, Geschwister-Scholl- Platz 1, D-80539 München, Germany — ²TU Munich, Walter Schottky Institut, Am Coulombwall 3, 85748 Garching, Germany — ³EPF Lausanne, Switzerland

Semiconductor nanowires is an emergent research topic in the field of nanoelectronics, as they form an excellent building block for 0D and 1D applications and allow novel architectures and material combinations. We study electronic transport properties of catalyst-free MBE grown GaAs nanowires, p-doped at a number of different doping levels. Detailed characterization of the wires including electronic contacts fabricated by e-beam lithography and based on palladium or annealed zinc-silver alloys are discussed. Contact properties and a pronounced hysteresis of the current through the nanowires, as a backgate-voltage is swept, are explained within tentative models. In addition we present first transport measurements on quantum dots, which are defined electrostatically as well as by etched constrictions.