Dresden 2009 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

TT: Fachverband Tiefe Temperaturen

TT 9: Correlated Electrons: Metal-Insulator Transition 1

TT 9.1: Vortrag

Montag, 23. März 2009, 14:00–14:15, HSZ 03

Pressure and doping driven metal-to-insulator transition in V₂O₃ — •Philipp Hansmann^{1, 2}, Alessandro Toschi², Giorgio Sangiovanni², Maurits Haverkort¹, Tanusri Saha-Dasgupta³, and Karsten Held² — ¹Max Planck Institute for Solid State Research, Stuttgart, Germany — ²Institute of Solid State Physics, Vienna University of Technology, Austria — ³S.N. Bose National Centre for Basic Sciences, Kolkata, India

In the V₂O₃ system chemical doping and application of pressure are usually assumed to have equivalent effects for the physics of the Mott Hubbard metal-to-insulator transition (MIT). Recent experimental evidence, however, shows that application of pressure on the Cr-doped V₂O₃ cannot repristinate the situation of the undoped compound. In order to understand the underlying physical mechanisms in the differently driven MITs we investigate optical and X-ray absorption spectra by means of the local density approximation and its merger with dynamical mean field theory (LDA+DMFT) as well as full multiplet cluster calculations.