Greifswald 2009 – wissenschaftliches Programm

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P: Fachverband Plasmaphysik

P 18: Poster: Theorie/Modellierung

P 18.27: Poster

Mittwoch, 1. April 2009, 17:30–19:30, Foyer des IfP

Kinetic Modelling of PECVD of Boron Nitride Films — Ya Ting Wu¹, Jens Matheis², and •Achim Lunk² — ¹Shanghai Jiaotong University, PR China — ²Institut für Plasmaforschung, Universität Stuttgart

Using PECVD for BN deposition more than hundred reaction equations must be taken into account and the reaction paths are very complex in a system with the educts B/H/X/N/Ar (X=F, Cl, Br, I). Therefore it takes advantage if modelling of the processes can be performed parallel to experimental investigations. In the paper following reactions are considered: neutral-neutral-, electron-neutral- and ion-neutral-processes in the volume as well as on the surface. Modelling was performed with the Plasma-PSR-module of the software Chemkin-Pro. It allows the introduction of different temperatures for the species in the description of plasma initiated reactions. For comparison of data resulting from our own experiments and from kinetic modelling we started with the simple system B/N/Ar at different plasma conditions. While at equilibrium conditions the influence of plasma can be neglected up to temperatures of 2500 K in kinetic modelling dissociation, ionisation and excitation play an important role. From analysis of results of kinetic modelling, the main process in BN deposition in the system B/N/Ar seems to be the dissociation of nitrogen molecules by electron impact and the reaction of atomic nitrogen with boron on the surface.