Hamburg 2009 – scientific programme

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SYDD: Defect centers in diamond for applications in quantum optics and nanophotonics

SYDD 2: Defect centers in diamond for applications in quantum optics and nanophotonics II

SYDD 2.7: Talk

Friday, March 6, 2009, 16:15–16:30, Audi-B

Nickel doping of nitrogen enriched CVD-diamond for the production of single photon emitters — •M. Wolfer, A. Kriele, O. Williams, H. Obloh, C.-C. Leancu, L. Kirste, and C.E. Nebel — Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, D-79108 Freiburg

In contrast to well understood nitrogen-vacancy (NV) centers, incorporation and properties of nickel-nitrogen (NiNx)-centers in diamond are not understood. In this work we report about the controlled doping of diamond with nickel into diamond by different doping methods using plasma CVD growth. As substrates we use single-, poly- and nanocrystalline diamonds. These substrates are overgrown in a H2/CH4 plasma to a thickness of typically 20 to 300 nm, using nickel/nitrogen addition during growth. As Ni-doping sources we used i) gaseous nickelocene, ii) nickel-powder and iii) nickel wire. We apply optical emission spectroscopy (OES) during growth to investigate and control Ni addition. Applied solid state characterizations are SIMS, Raman scattering and photoluminescence spectroscopy. The exposure of Ni to the plasma gives strong emission intensities at 341 nm as detected by OES. Ni in diamond shows however only weak emissions in the regime 790 to 900 nm which is attributed to the non optimized Ni-N formation. To enhance the density of active NiNx centers, thermal annealing experiments have been applied up to 1400 ^∘C to stimulate N diffusion. The deduced results will be compared with data in the literature to reveal mechanisms of Ni center formation in diamond.