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T: Fachverband Teilchenphysik

T 55: Halbleiterdetektoren 1

T 55.6: Talk

Monday, March 9, 2009, 18:15–18:30, A125

Evaluation of Radiation Tolerant ATLAS Pixel Sensors under SuperLHC Conditions — Claus Gößling, Silke Herbst, Reiner Klingenberg, Daniel Muenstermann, •André Rummler, Georg Troska, Tobias Wittig, and Renate Wunstorf — TU Dortmund, Experimentelle Physik IV, D-44221 Dortmund

ATLAS is a multi-purpose detector at the Large Hadron Collider (LHC). After the planned upgrade to SuperLHC, the pixel detector as the innermost part of the ATLAS tracker will have to withstand equivalent neutron fluences of up to 2·10¹⁶ n_eqcm⁻².
We determined the characteristics of silicon pixel devices (SingleChips) and other test structures irradiated either with 24 GeV protons at CERN PS or with reactor neutrons. The SingleChips that were used implement an n⁺-in-n-bulk design and were taken from qualified ATLAS production wafers. Charge collection efficiency (CCE) studies on those sensors are motivated by discrepancies between simulation results[Kli06] and recent measurements of strip detectors at such high fluences[Man08]. Furthermore, I-V-curves were taken in order to analyse the power dissipation. Results of these test series will be presented.

[Kli06] R.Klingenberg et al.,"Prediction of charge collection efficiency in hadron-irradiated pad and silicon detectors," Nucl. Instr. and Meth. A 568 (2006) 34-40
[Man08] I.Mandić et al.,"Observation of full charge collection efficiency in n+p strip detectors irradiated up to 3·10¹⁵ n_eqcm⁻²," presentation at the RESMDD08, October 2008, Florence, Italy