München 2009 – scientific programme

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T: Fachverband Teilchenphysik

T 56: Halbleiterdetektoren 2

T 56.6: Talk

Tuesday, March 10, 2009, 18:00–18:15, A125

Comparison of Electrical Properties and Charge Collection Efficiency between Diamond, 3D-Silicon, and Planer Silicon Pixel Detectors — •Jieh-Wen Tsung, Markus Mathes, Fabian Hügging, and Norbert Wermes — Physikalisches Institut, Universität Bonn, Bonn, Germany

Detectors with higher radiation tolerance are in demand for super Large Hadron Collider(sLHC), because the radiation dose will be at least ten times larger after the LHC upgrade. Diamond, 3D-Silicon, and n-on-p planer silicon are promising radiation-hard sensors for the pixel vertex detectors of ATLAS. The sensors and the ATLAS FE-I3 readout chips are bump-bonded, and then the electrical properties and charge collection efficiency of such devices are tested using the standard ATLAS pixel test set-up. For every sensor types, the leakage current, the depletion depth versus bias voltage, the noise, and the lowest threshold of the output signal are measured. Besides, the radiation from the radioactive sources is applied to generate electron-hole pairs in the sensors, and then the charge collection efficiency is measured. Finally, the performances of diamond, 3D-silicon, n-on-p planer silicon, and the current ATLAS n-on-n planer silicon sensors are compared to search for the most sufficient sensor for the future colliders.