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T: Fachverband Teilchenphysik

T 56: Halbleiterdetektoren 2

T 56.8: Talk

Tuesday, March 10, 2009, 18:30–18:45, A125

Two-dimensional Numerical Modelling of MOS Test-Structures — •Ajay. K. Srivastava, E. Fretwurst, R. klanner, and H. Perrey — Institute for Experimental Physics, University of Hamburg 22761, Hamburg, Germany

For the European XFEL a silicon pixel detector with a high dynamic range (0-10**5 12 keV photons) and a radiation tolerance up to 1 GGy (12 keV photons) will be built. In order to study the radiation effects in the SiO2 and at the Si-SiO2 interface, gated diode test structures fabricated by CiS, Erfurt have been irradiated up to doses of 1 GGy and the I-V and C-V characteristics as function of frequency have been measured. The devices were simulated using the ISE-TCAD DESSIS 2-D device simulator version 2005.10 using parameters obtained from the measurements. The detailed comparison of the simulation with the measurements and the extraction of Nox (oxide charge density), Dit (interface trap density) is presented.