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T: Fachverband Teilchenphysik

T 57: Halbleiterdetektoren 3

T 57.5: Vortrag

Mittwoch, 11. März 2009, 17:45–18:00, A125

Irradiation Studies of GaAs Sensors in a High Intensity Electron Beam — •Alexander Ignatenko^2,3, Konstantin Afanaciev^2,3, Elena Castro², Wolfgang Lange², Wolfgang Lohmann², Martin Ohlerich^1,2, Ringo Schmidt^1,2, and Sergej Schuwalow² — ¹BTU Cottbus, Konrad-Zuse-Str. 1 — ²DESY, Zeuthen, Platanenallee 6 — ³NCPHEP, Minsk, Bogdanovic Str. 153

Sensors in the very forward calorimeters of an ILC experiment or for beam condition monitoring at the LHC have to withstand high radiation doses. Here we report on the performance of GaAs sensors as a function of the absorbed dose in a 10 MeV electron beam at the S-DALINAC (TU Darmstadt). Sensors with different chromium concentrations are produced by the Siberian Institute of Technology. The sensor thickness varies between 150 and 500 micrometers. The sensors are irradiated up to doses of 1.5 MGy. The leakage current and the charge collection efficiency are measured as a function of the absorbed dose.