Bonn 2010 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 60: Halbleiterdetektoren III
T 60.3: Vortrag
Mittwoch, 17. März 2010, 14:30–14:45, HG V
Extraction of Parasitic RC Parameters of a DEPFET Pixel Matrix — •Christian Koffmane1, Ladislav Andricek1, Christian Kreidl2, Hans-Günther Moser1, Jelena Ninkovic1, Rainer Richter1, Andreas Ritter1, and Andreas Wassatsch1 — 1Max-Planck-Institut für Physik, München — 2Institut für Technische Informatik, Universität Heidelberg
For the upgrade of the Belle experiment a new vertex detector containing a DEPFET (depleted p-channel field effect transistor) pixel matrix with a fast frame read-out time of 10µs or 20µs will be built. The DEPFET matrix will have the dimensions of about 8cm x 1cm. Due to a split matrix layout the output signals of the uppermost DEPFET pixels have to pass 4cm before they are sampled by the frontend electronics.
The knowledge of the delay time of the Gate, Clear and Drain lines is necessary to guarantee the required read-out time of 80ns per row. The extraction of the parasitic RC parameters is based on the 2-dimensional layout file and takes the non-planar topology of the DEPFET into account.
The used method and examples of different pixel cell layouts which were used for validation will be presented and their impact on the detector performance will be discussed.