Bonn 2010 – wissenschaftliches Programm

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T: Fachverband Teilchenphysik

T 63: Strahlenhärte von Halbleiterdetektoren I

T 63.4: Vortrag

Dienstag, 16. März 2010, 17:30–17:45, HG ÜR 6

Comparison of Diamond, 3D-Silicon and Planar-Silicon Sensors for ATLAS Trackers of Super Large Hadron Collider — •Jieh-Wen Tsung, Fabian Hügging, and Norbert Wermes — Physikalisches Institut der Universität Bonn, Nussallee 12, 53115 Bonn

The charge collection performance of Diamond, 3D-Si and Planar sensors are compared in this research. The aim is to find the sensor with highest radiation tolerance for ATLAS trackers for super Large Hadron Collider, which should resist 10¹⁶ n_eq/cm² of particle flux, when it is 3 cm away from the interaction point. The candidates are scCVD diamond, pCVD diamond, Planar n-on-n and n-on-p Silicon, and 3D-Silicon with 2, 3, and 4 electrodes per pixel. After assembling these sensors to hybrid pixel detectors using ATLAS FE-I3 readout electronics, all devices undergo an extended characterization and irradiation program. To obtain signal to noise ratio (S/N) of all the devices, the charge collection efficiency is measured using a m.i.p. like ⁹⁰Sr radioactive source, and the electronic noise per pixel is measured using ATLAS standard readout system. The devices are irradiated at Karlsruhe Irradiation Center with a 25MeV proton beam. The irradiation will be done in steps until the target fluence. The S/N ratio of all kinds of sensors versus increasing radiation dose are compared. The results of comparison will be presented in this talk.