Bonn 2010 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 63: Strahlenhärte von Halbleiterdetektoren I
T 63.5: Vortrag
Dienstag, 16. März 2010, 17:45–18:00, HG ÜR 6
Annealing studies on 23 GeV proton irradiated epitaxial silicon diodes — •Cristina Pirvutoiu1,2, Alexandra Junkes1, Volodymyr Khomenkov1, and Robert Klanner1 — 1Institute for Experimental physics, Detector Laboratory, University of Hamburg, Hamburg 22761 — 2Marie Curie Initial Training Network
Epitaxial (Epi) silicon is considered to be an option for sensors in high energy physics experiments at the super Large Hadron Collider due to its high radiation hardness. In order to understand the properties of such sensors and the radiation induced damage, we investigated standard epitaxial (Epi-St) and oxygen enriched epitaxial (Epi-Do) material with 100 and 150 *m thickness by Deep Level Transient Spectroscopy (DLTS). The irradiations were carried out at the PS at CERN with 23 GeV protons with fluences of 6.4 1011 cm-2. We performed macroscopic measurements like capacitance-voltage (CV) and current-voltage characteristics (IV) to obtain the sensor properties (depletion voltage, leakage current, effective doping concentration) and DLTS measurements in order to obtain the defect properties (defect concentration, cross section, activation energy). Isothermal annealing was performed at 80o C up to annealing times of 30 minutes followed by isochronal annealing up to 400oC. At low annealing temperatures, we found a correlation between two defect levels and the leakage current, while we followed the annealing out of the divacancy (V2) and the transformation into the x-defect at higher temperatures.