Bonn 2010 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 64: Strahlenhärte von Halbleiterdetektoren II
T 64.9: Vortrag
Donnerstag, 18. März 2010, 18:45–19:00, HG ÜR 6
Development of radiation hard Si sensors for science at XFEL — •Ajay Kumar Srivastava1, Eckhart Fretwurst1, Robert Klanner1, Hanno Perrey1, Ioanna Pintilie2, Thorben Theedt1, and Jiaguo Zhang1,3 — 1Institute for Experimental Physics, Detector Laboratory, University of Hamburg, Hamburg 22761 — 2National Institute of Material Physics, RO-77125 Bucharest, Romania — 3Marie Curie Initial Training Network (MC-PAD)
Science at the European XFEL requires precision pixel detectors which withstand a dose of up to 1 GGy of 12 keV photons. CMOS test structures (CMOS capacitors and CMOS gated diodes) have been irradiated and capacitance-voltage (C/V), conductance-voltage (G/V), current-voltage (I/V) and Thermally Depolarization Relaxation Current (TDRC) measurements have been performed. From these measurements oxide charge densities (Nox) and interface densities (Dit) have been extracted, implemented into the semiconductor device simulation program Synopsys-TCAD. On this basis the measurements on the test structures could be reproduced. This experience is used to design radiation tolerant sensors.