Hannover 2010 – scientific programme
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A: Fachverband Atomphysik
A 12: Atomic Clusters I
A 12.6: Talk
Wednesday, March 10, 2010, 15:45–16:00, F 303
Electronic Properties of Transition Metal Doped Silicon Clusters — •Jochen Rittmann1, Konstantin Hirsch2, Christian Kasigkeit2, Philipp Klar2, Andreas Langenberg1, Fabian Lofink2, Jürgen Probst2, Marlene Vogel2, Jörg Wittich2, Vicente Zamudio-Bayer2, Thomas Möller2, Bernd von Issendorff3, and Tobias Lau1 — 1Helmholtz-Zentrum Berlin für Materialien und Energie, Institut für Methoden und Instrumentierung der Synchrotronstrahlung, Albert-Einstein-Str. 15, 12489 Berlin — 2Technische Universität Berlin, Institut für Optik und Atomare Physik, Hardenbergstr. 36, 10623 Berlin — 3Universität Freiburg, Fakultät für Physik, Stefan-Meier-Str. 21, 79104 Freiburg
Size selected transition metal doped silicon clusters have been studied with resonant 2p x-ray absorption spectroscopy. Despite the different number of valence electrons, nearly identical local electronic structures are found at the dopant atoms in TiSi16+, VSi16+, and CrSi16+. Additional measurements of the direct 2p photoionization as well as spectroscopy on the valence electrons of MSin+ clusters, (M=V, Ti, Cr; n=15-17) allow us to determine the band gab, which is predicted to be exceptional high for the very symmetric MSi16+ clusters (M=V, Ti, Cr). The experimental data can be understood in the spherical potential model. The data indicate strongly interlinked electronic and geometric properties: While the transition metal atoms impose a geometric rearrangement on the silicon cluster, the interaction with the highly symmetric silicon cage determines the electronic structure of the transition metal dopants.