Hannover 2010 – scientific programme

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Q: Fachverband Quantenoptik und Photonik

Q 55: Poster II

Q 55.91: Poster

Thursday, March 11, 2010, 16:00–19:00, Lichthof

Optical Properties of the Insulator-On-Silicon-On-Insulator Material System — •Daniel Pergande and Ralf B. Wehrspohn — Martin-Luther-Universität Halle-Wittenberg, 06099 Halle

In the last years great efforts lead to a strong miniaturization of optical components by means of realization of devices within the silicon-on-insulator (SOI) platform which is completely compatible to CMOS technology. The very high refractive index contrast between the Si core (n=3.5) and the oxide cladding (n=1.45) and air (n=1), respectively, leads to a high confinement of light inside a waveguide. To meet the demands of next generation networks an appropriate material system which provides equably propagation of TE and TM-polarization is essential. In addition, to realize photonic crystal (PhC) based polarization sensitive devices a fully symmetrical material system is needed to avoid polarization mixing. For most of the (symmetric) SOI-based structures no transmission for TM-polarized light was reported or for TM-polarization a large deviation between theory and experiment was observed.

We present polarization-dependent optical transmission properties of a completely symmetric SOI-based material system. In contrast to typical SOI structures here an insulator-on-silicon-on-insulator (IOSOI) material system has been fabricated, which features an additional silica top layer. The group index dispersions and absorption coefficients of ridge waveguides will be presented. Furthermore, PhC waveguides were characterized and we present measurements to determine the amount of polarization crosstalk.