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Q: Fachverband Quantenoptik und Photonik
Q 67: Photonics IV
Q 67.2: Vortrag
Freitag, 12. März 2010, 14:15–14:30, F 128
Addressing single mode in GaAs/AlAs micropillar resonators — •Georgios Ctistis1,3, Edwin van der Pol1, Alex Hartsuiker1, Maela Bazin2, Julien Claudon2, Jean-Michel Gérard2, and Willem L. Vos1,3 — 1Center for Nanophotonics, FOM Institute for Atomic and Molecular Physics (AMOLF), Amsterdam, Netherlands — 2CEA-CNRS Nanophysics and Semiconductors joint laboratory, Grenoble, France — 3Complex Photonic Systems (COPS), MESA+ Institute for Nanotechnology, University of Twente, Netherlands
In this talk we present broadband white-light reflectivity experiments on micropillar resonators with diameters ranging between 1µ m and 20 µ m. The micropillars consist of a GaAs λ-layer, sandwiched between two Bragg-stacks made of λ/4 GaAs/AlAs layers, and were fabricated by molecular-beam epitaxy. We are able to spectrally resolve distinct transverse modes in the reflectivity experiments and to address single modes by scanning the probe beam along the top facet of the micropillar. The positioning of the focused laser beam turns out to be crucial for pillar diameters exceeding the beam diameter, since at every position the coupling efficiency to different modes changes. By decreasing the pillar diameter, we are able to resolve single modes, since the spacing between the modes increases.