Regensburg 2010 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
DF: Fachverband Dielektrische Festkörper
DF 10: Dielectric surfaces and interfaces
DF 10.9: Vortrag
Mittwoch, 24. März 2010, 17:10–17:30, H11
Preparation and dielectric investigation of organic metal insulator semiconductor (MIS) structures with a ferroelectric polymer — René Kalbitz1, Peter Frübing1, Reimund Gerhard1, and •Martin Taylor2 — 1Department of Physics and Astronomy, University of Potsdam, Karl-Liebknecht-Straße 24-25, 14476, Potsdam, Germany — 2School of Electronic Engineering, Bangor University, Dean Street, Bangor Gwynedd, LL57 1UT, UK
Ferroelectric field effect transistors (FeFETs) offer the prospect of an organic-based memory device. Since the charge transport in the semiconductor is confined to the interface region between the insulator and the semiconductor, the focus of the present study was on the investigation of this region in metal-insulator-semiconductor (MIS) capacitors using dielectric spectroscopy. Capacitance-Voltage (C-V) measurements at different frequencies as well as capacitance-frequency (C-f) measurements after applying different poling voltages were carried out. The C-V measurements yielded information about the frequency dependence of the depletion layer width as well as the number of charges stored at the semiconductor/ insulator interface. The results are compared to numerical calculations based on a model introduced by S. L. Miller (JAP, 72(12), 1992). The C-f measurements revealed three main relaxation processes. An equivalent circuit has been developed to model the frequency response of the MIS capacitor. With this model the origin of the three relaxations may be deduced.