DF 11: High-k and Low-k Dielectrics I (Joint Session DS/DF)
Wednesday, March 24, 2010, 09:30–11:00, H8
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09:30 |
DF 11.1 |
Spectroscopic investigations of interaction between C60 fullerene and nitrogen atom from amine group — •Jolanta Klocek, Daniel Friedrich, Kostyantyn Zagorodniy, and Dieter Schmeisser
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09:45 |
DF 11.2 |
The influence of elastic and inelastic processes on trap assisted tunnelling through thin dielectric films — •Grzegorz Kozlowski, Jarek Dabrowski, Piotr Dudek, Gunther Lippert, and Grzegorz Lupina
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10:00 |
DF 11.3 |
Electrically optimized high-κ metal gate MOSFET by specific modification of the band alignment — •Łukasz Starzyk, Massimo Tallarida, and Dieter Schmeißer
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10:15 |
DF 11.4 |
A comparison of (SrO)x(ZrO2)(1−x) and ZrO2 as potential high-k dielectric for future memory applications — •Matthias Grube, Dominik Martin, Walter Michael Weber, Thomas Mikolajick, Lutz Geelhaar, and Henning Riechert
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10:30 |
DF 11.5 |
Nanoscale analysis of the electric properties of ultra thin ZrO2-, (ZrO2)x(Al2O3)1−x- and ZrO2/Al2O3/ZrO2-films. — •Dominik Martin, Matthias Grube, Elke Erben, Wenke Weinreich, Uwe Schröder, Lutz Geelhaar, Walter Weber, Henning Riechert, and Thomas Mikolajick
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10:45 |
DF 11.6 |
Atomic Vapour Deposition of TiTaO for MIM applications — •Mindaugas Lukosius, Canan Baristiran Kaynak, Christian Wenger, Günther Ruhl, and Simon Rushworth
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