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DF: Fachverband Dielektrische Festkörper

DF 12: High-k and Low-k Dielectrics II (Joint Session DS/DF)

DF 12.2: Vortrag

Mittwoch, 24. März 2010, 11:30–11:45, H8

Resistive switching in TiN/HfO₂/Ti/TiN MIM structures for future memory applications — •Christian Walczyk¹, Christian Wenger¹, Mindaugas Lukosius¹, Mirko Fraschke¹, Ioan Costina¹, Sebastian Schulze¹, Sebastian Thiess², Wolfgang Drube², and Thomas Schroeder¹ — ¹IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany. — ²Hasylab at DESY, Notkestrasse 85, 22607 Hamburg, Germany.

The electrically switchable resistance change phenomenon between a high (OFF-state) and a low (ON-state) resistive state of a metal- insulator-metal (MIM) diode structure has attracted considerable at- tention in recent years for future non-volatile memory applications (RRAM). Especially hafnium dioxide (HfO₂) as insulator is among the oxides particularly desirable due to the fact that it is nowadays con- sidered as a BEOL Si CMOS compatible binary metal oxide system. Typical bipolar current-voltage characteristics of a TiN/HfO₂/Ti/TiN stack with a HfO₂ thickness of 10 nm will be presented. The switching properties crucially depend on a) whether the additional Ti layer is integrated as top or bottom electrode and b) on the application of post-deposition annealings (PDA). To unveil the origin of these observations, a materials science study by TOF-SIMS, TEM and HA- XPS was carried out. It is possible to prove that this metallic Ti layer getters during the PDA treatments oxygen from HfO₂, resulting in the formation of non-stoichiometric HfO_x. Due to their significance in NVM technology, we will furthermore present the retention and cycling endurance characteristics.