Regensburg 2010 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 12: High-k and Low-k Dielectrics II (Joint Session DS/DF)
DF 12.6: Vortrag
Mittwoch, 24. März 2010, 12:30–12:45, H8
Determination of interfacial layers in high - k ALD nanolaminate materials by ARXPS and SRXPS measurements.
— •Jakub Wyrodek1, Massimo Tallarida1, Dieter Schmeißer1, and Martin Weisheit2 — 1Brandenburgische Technische Universität, Angewandte Physik-Sensorik, Konrad-Wachsmann-Allee 17, Cottbus D-03046, Germany
— 2GLOBALFOUNDRIES, Dresden, Germany
The interfacial layers of high dielectric constant (high - k) nanolaminate films are here explored. Problems concerning ALD nanolaminate layers deals mainly with lack of accurate methods to determine in depth profile of few nm thick stacks. Modified angle resolved XPS(ARXPS) and synchrotron radiation XPS(SRXPS) are proposed as methods suitable in layer profiling. Studied stacks containing ZrO/HfO or AlO/ZrO, were prepared on Si substrates by atomic layer deposition (ALD). Two sets of experiments were covered. First dealt with initial growth (up to 20 cycles, with thickness d < 2nm) of AlO/ZrO and included layer by layer insitu investigation by SRXPS. Second experiment refer to industrial grown ZrO/HfO films ( d ∼ 3nm ) processed with various parameters resulting in both, layer by layer and homogenous depositions. For those samples exsitu XPS, with angle dependent variation of probing depth, measurements were covered. By comparing obtained intensity ratios for different angles with computational developed stack model it was found that no simple layer by layer but some intermixing growth occurred including interaction with silicon substrate.