Regensburg 2010 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 12: High-k and Low-k Dielectrics II (Joint Session DS/DF)

Mittwoch, 24. März 2010, 11:15–12:45, H8

	11:15	DF 12.1	Electrical and structural characteristics of SrTaO/SrTiO based M-I-M capacitors — •Canan Baristiran Kaynak, Mindaugas Lukosius, Bernd Tillack, Christian Wenger, Guenther Ruhl, and Tom Blomberg
	11:30	DF 12.2	Resistive switching in TiN/HfO2/Ti/TiN MIM structures for future memory applications — •Christian Walczyk, Christian Wenger, Mindaugas Lukosius, Mirko Fraschke, Ioan Costina, Sebastian Schulze, Sebastian Thiess, Wolfgang Drube, and Thomas Schroeder
	11:45	DF 12.3	Oxygen Engineering of HfO2−x Thin Films grown by Reactive Molecular Beam Epitaxy — •Erwin Hildebrandt, Jose Kurian, Peter Zaumseil, Thomas Schröder, and Lambert Alff
	12:00	DF 12.4	Band structure and electrical properties of MBE grown HfO2 - based alkaline earth perovskites — •Dudek Peter, Łupina Grzegorz, Kozłowski Grzegorz, Dabrowski Jarek, Lippert Gunther, Müssig Hans-Joachim, Schmeißer Dieter, and Schroeder Thomas
	12:15	DF 12.5	In-situ EELS and UPS measurements on HfO2 ALD layers — •Marcel Michling, Massimo Tallarida, Krzysztof Kolanek, and Dieter Schmeisser
	12:30	DF 12.6	Determination of interfacial layers in high - k ALD nanolaminate materials by ARXPS and SRXPS measurements. — •Jakub Wyrodek, Massimo Tallarida, Dieter Schmeißer, and Martin Weisheit