Regensburg 2010 – scientific programme
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DF: Fachverband Dielektrische Festkörper
DF 17: Nano- and microstructured dielectrics
DF 17.1: Talk
Thursday, March 25, 2010, 15:30–15:50, H11
Low-Voltage Nano-Domain Writing in He-Implanted Lithium Niobate Crystals — •Martin Lilienblum1, Avishai Ofan2, Ákos Hoffmann1, Ophir Gaathon2, Lakshmanan Vanamurthy3, Sasha Bakhru3, Hassaram Bakhru3, Richard Osgood Jr.2, and Elisabeth Soergel1 — 1Institute of Physics, University of Bonn, 53115 Bonn, Germany — 2Center for Integrated Science and Technology, Columbia University, New York NY 10027, USA — 3College of Nanoscale Science and Engineering, State University of New York at Albany, Albany NY 12222, USA
A scanning force microscope tip is used to write ferroelectric domains in He-implanted single-crystal lithium niobate and subsequently probe them by piezoresponse force microscopy. Investigation of cross-sections of the samples showed that the buried implanted layer, ∼ 1 µm below the surface, is non-ferroelectric and can thus act as a barrier to domain growth. This barrier enabled stable surface domains of < 1 µm size to be written in 500 µm-thick crystal substrates with voltage pulses of only 10V applied to the tip.