Regensburg 2010 – scientific programme
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DF: Fachverband Dielektrische Festkörper
DF 3: Poster I: Nano- and microstructured dielectrics, surfaces and interfaces, dielectric composites
DF 3.2: Poster
Monday, March 22, 2010, 15:00–17:30, Poster D1
Formation and modification of Schottky barriers at the PZT/Pt interface — •Andreas Klein1, Wenbin Wu2, Feng Chen1, and Robert Schafranek1 — 1Technische Universität Darmstadt, Institute of Material Science, Petersenstraße 32, D-64287 Darmstadt, Germany — 2Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei 230026, People's republic of China
A determination of the Schottky barrier height at the interface between ferroelectric Pb(Zr,Ti)O3 thin films and Pt using in-situ photoelectron spectroscopy is presented. The barrier height for holes, given by the energy difference of the valence band maximum and the Fermi energy, varies reversibly between 1.1 and 2.2 eV for oxidizing and reducing treatments. The changes in barrier are accompanied by a varying amount of metallic Pb at the interface. The most severe reduction is observed after storage in vacuum, which is attributed to the strongly reducing environment because of the presence of hydrogen and water in the residual gas of the vacuum system and the catalytically active Pt surface.