Regensburg 2010 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 3: Poster I: Nano- and microstructured dielectrics, surfaces and interfaces, dielectric composites
DF 3.6: Poster
Montag, 22. März 2010, 15:00–17:30, Poster D1
Growth of TiOx Thin Films by Liquid Delivery Atomic Layer Deposition for future RRAM Applications — •Marcel Reiners, Seong Keun Kim, Susanne Hoffmann-Eifert, Jiahua Zhang, Carsten Kuegeler, and Rainer Waser — Forschungszentrum Juelich, IFF-6 and JARA-FIT, 52425 Juelich, Germany
Titanium-dioxide (TiO2−δ) is widely studied as material
for redox based resistive switching memories. The Atomic Layer
Deposition (ALD) enables dense and 3D conformal films down to a
thickness of a few nanometer. Here we report on liquid delivery ALD
of TiOx from Titanium-tetramethylheptanedoinato-di-isopropoxide
(Ti(TMHD)2(O-i-Pr)2) and Titanium-tetrapropoxide
(Ti(O-i-Pr)4) as precursors with water as oxygen source. The film
growth was characterized by XRR and XRF and the morphology was
analyzed by means of AFM and HRTEM. TiO2 films prepared from
Ti(TMHD)2(O-i-Pr)2 deposited on Pt|ZrO2|SiO2|Si in a
temperature range from 340∘C-390∘C show a
nanocrystalline anatase-type structure with a smooth morphology and
a rms roughness about 0.1 nm. TiO2 films deposited from
Ti(O-i-Pr)4 at a temperature of 250∘C undergo a
structural change from an amorphous to a polycrystalline phase above
a critical film thickness of about 10 nm. Low current bipolar
resistance switching was confirmed in 100x100 nm2 small
Pt|TiO2|Ti|Pt structures with integrated 8 nm TiOx
films.
This work was supported by the Deutsche Forschungs
Gemeinschaft (DFG, DE790/5-1 & HO2480/2-1).