Regensburg 2010 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 6: Focus Session: High-k and high mobility materials for CMOS
DF 6.3: Topical Talk
Dienstag, 23. März 2010, 11:10–11:35, H11
Amorphous ternary high-k oxides on Si and higher mobility substrates — •Marcelo Lopes1,2, Eylem Durgun-Ozben1,2, Alexander Nichau1,2, Roman Luptak1,2, Martin Roeckerath1,2, Juergen Schubert1,2, and Siegfried Mantl1,2 — 1Institute for Bio- and Nanosystems (IBN1), Research Center Juelich, Juelich, Germany — 2JARA-Fundamentals of Future Information Technologies, Juelich, Germany
The miniaturization of metal-oxide-semiconductor field effect transistors (MOSFETs) is approaching fundamental limits. Novel materials are needed in order to continue the CMOS scaling. High-k dielectrics combined with semiconductors with better transport properties than Si is an attractive alternative. Strained Si (sSi), Ge, and SiGe are candidates with intrinsic higher carrier mobilities than Si. However, one of the issues that still remains is the challenge to achieve a high quality interface between the high-k film and these semiconductor substrates. The search for alternative high-k oxides that could offer stable interfaces offering a low density of electrically active defects has become a topic of major interest. Ternary rare earth oxides such as the scandates (LaScO3, GdScO3 or DyScO3) and LaLuO3 have been identified as promising high-k candidates for Si-based CMOS applications. In this contribution, we will review our results on the structural and electrical properties of REScO3 (RE = La, Gd, Tb, Sm) and LaLuO3 amorphous thin films deposited on Si. In addition, the integration of these oxides with high mobility substrates such as sSi, Ge, and SiGe will be presented.