Regensburg 2010 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 6: Focus Session: High-k and high mobility materials for CMOS

DF 6.5: Topical Talk

Tuesday, March 23, 2010, 12:20–12:45, H11

Wafer Bonding Techniques for Advanced CMOS — •Manfred Reiche — Max-Planck-Institut für Mikrostrukturphysik, Halle

There are numerous discussions on future strategies of complementary metal-oxide-semiconductor (CMOS) device scaling. According to simulations, the gate length of an ultimately scaled MOSFET is well below 10 nm. Devices with gate lengths as small as 10 nm were already demonstrated using existing technologies. Apart from scaling new materials are employed to boost the transistor performance. Besides new materials for gate stacks (high-k materials, metal gates), interconnects, etc., new substrates are strongly required. For instance, silicon-on-insulator (SOI) is one of the most important substrates for high performance applications. The combination of the advantages of SOI with high-mobility channel materials (strained silicon, germanium) offers additional possibilities to improve the device performance. All these substrates are realized by wafer bonding techniques. The different wafer bonding techniques and their fundamental physical and chemical principles as well as the application to advanced CMOS substrates are reviewed.