Regensburg 2010 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
DS: Fachverband Dünne Schichten
DS 16: [CPP] Organic Electronics and Photovoltaics I (Joint Session DS/CPP/HL/O)
DS 16.3: Talk
Tuesday, March 23, 2010, 10:00–10:15, H37
Radical Molecular Wires — •Georg Heimel1, Egbert Zojer2, Lorenz Romaner3, Jean-Luc Brédas4, and Francesco Stellacci5 — 1Institut für Physik, Humboldt-Universität zu Berlin, Germany — 2Institut of Solid State Physics, Graz University of Technology, Austria — 3Chair of Atomistic Modeling and Design of Materials, University of Leoben, Austria — 4School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, USA — 5Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, USA
The technological relevance and the functionality of semiconducting materials
originate in the fact that their conductivity and the band alignment at the
interfaces with other materials can be controlled through doping. Here, we
consider the ultimate miniaturization of functional devices by computationally
investigating the doping of molecular wires suspended between two metal
electrodes.1 For representative systems we find that, upon doping, the
molecular conductivity is enhanced by more than two orders of magnitude. We
elucidate the microscopic origin of this dramatic effect and present an
intuitive picture, which rationalizes our observations in terms of
Fermi-level pinning. Our results shed new light on recent experimental
findings and, most importantly, in-depth understanding of the doping mechanism
enables the targeted development of new functional components for
sensing and switching at the single-molecule scale.
[1] G. Heimel et al., Nano Lett. 9, 2559 (2009).