Regensburg 2010 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

DS: Fachverband Dünne Schichten

DS 23: High-k and Low-k Dielectrics I (Joint Session DS/DF)

DS 23.6: Talk

Wednesday, March 24, 2010, 10:45–11:00, H8

Atomic Vapour Deposition of TiTaO for MIM applications — •Mindaugas Lukosius¹, Canan Baristiran Kaynak¹, Christian Wenger¹, Günther Ruhl², and Simon Rushworth³ — ¹IHP, Technologiepark 25, 15236 Frankfurt Oder, Germany — ²Infineon, Wernerwerkstr. 2, 93049 Regensburg, Germany — ³SAFC HiTech, Bromborough, Wirral, Merseyside, U.K. CH62 3QF

Metal-Insulator-Metal (MIM) capacitors are widely used in ICs for Radio-Frequency (RF) applications. Currently, capacitors fabricated by performing MIM structures use silicon oxide or silicon nitride as an insulating layer. However, the capacitance density of these materials is limited by low dielectric constant values. Therefore, for further integration of passive components such as capacitors into CMOS devices, dielectric materials with higher permittivity than SiO2 (k = 3.8) are required. Atomic Vapor Deposition (AVD*) technique was successfully applied for the first time for depositions of TiTaO oxide films on 8-inch wafers using two separate Ti(OPri)2(mmp)2 and TBTDET precursors for MIM applications in back-end of line (BEOL). Composition, crystalinity and electrical properties such as dielectric constant, capacitance and leakage currents were studied in Au/TiTaO/TiN/Si MIM capacitors. The effect of post deposition annealing (PDA) and investigation of different top electrode materials will be also presented.