Regensburg 2010 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 24: High-k and Low-k Dielectrics II (Joint Session DS/DF)
DS 24.2: Vortrag
Mittwoch, 24. März 2010, 11:30–11:45, H8
Resistive switching in TiN/HfO2/Ti/TiN MIM structures for future memory applications — •Christian Walczyk1, Christian Wenger1, Mindaugas Lukosius1, Mirko Fraschke1, Ioan Costina1, Sebastian Schulze1, Sebastian Thiess2, Wolfgang Drube2, and Thomas Schroeder1 — 1IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany. — 2Hasylab at DESY, Notkestrasse 85, 22607 Hamburg, Germany.
The electrically switchable resistance change phenomenon between a high (OFF-state) and a low (ON-state) resistive state of a metal- insulator-metal (MIM) diode structure has attracted considerable at- tention in recent years for future non-volatile memory applications (RRAM). Especially hafnium dioxide (HfO2) as insulator is among the oxides particularly desirable due to the fact that it is nowadays con- sidered as a BEOL Si CMOS compatible binary metal oxide system. Typical bipolar current-voltage characteristics of a TiN/HfO2/Ti/TiN stack with a HfO2 thickness of 10 nm will be presented. The switching properties crucially depend on a) whether the additional Ti layer is integrated as top or bottom electrode and b) on the application of post-deposition annealings (PDA). To unveil the origin of these observations, a materials science study by TOF-SIMS, TEM and HA- XPS was carried out. It is possible to prove that this metallic Ti layer getters during the PDA treatments oxygen from HfO2, resulting in the formation of non-stoichiometric HfOx. Due to their significance in NVM technology, we will furthermore present the retention and cycling endurance characteristics.
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