Regensburg 2010 – scientific programme

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DS: Fachverband Dünne Schichten

DS 26: [CPP] Organic Electronics and Photovoltaics III (Joint Session DS/CPP/HL/O)

DS 26.8: Talk

Wednesday, March 24, 2010, 11:30–11:45, H37

Deposition of P3HT via dip coating onto transistors with channel lengths below 1 µ m — •Silviu Botnarash, Steve Pittner, and Veit Wagner — School of Engineering and Science, Jacobs University Bremen, Campus Ring 1, D-28759, Germany

A high quality interface between the organic semiconductor and the oxide is crucial for the high performance of an OFET. A good surface treatment is imperative, but it will lower the surface energy of the oxide, making it difficult to spin coat on it uniform semiconductor layers from solvents like chloroform or toluene. We report on the usage of the dip coating technique to achieve highly ordered layers of regioregular poly(3-hexylthiophene) (rr-P3HT). By varying the removal speed of the silicon substrate from solution, the concentration of the solution or both, one can achieve ultrathin layers of rr-P3HT which permit to analyze OFET properties in the sub-monolayer regime. Decreasing the channel length of the transistors down to the range of the contour length of the rr-P3HT is expected to improve the characteristics of the OFET’s. An additionally applied electric field between the source and drain electrodes during dip coating facilitates the trapping of P3HT molecules on the electrodes increasing the performance of the device. We used rr-P3HT with an average contour length of 80-100 nm. Compared to previously reported results for chloroform based solutions, the same concentration range of rr-P3HT in toluene displayed better characteristics, which is believed to be due to lower evaporation rate of toluene. Subsequent drying in a nitrogen rich atmosphere over a period of up to 24 h positively influences the performance of the OFET’s.