Regensburg 2010 – scientific programme

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DS: Fachverband Dünne Schichten

DS 29: Poster: Molecular Spintronics, Biomolecular and Functional Organic Layers, Organic Electronics and Photovoltaics, Plasmonics and Nanophotonics, Organic Thin Films, Nanoengineered Thin Films, Thin Film Characterisation,

DS 29.25: Poster

Wednesday, March 24, 2010, 15:00–17:30, Poster A

Integration of non-volatile organic memory devices and organic diodes into a passive matrix crossbar array — •Philipp Sebastian, Hans Kleemann, Björn Lüssem, and Karl Leo — Institut für Angewandte Photophysik, TU Dresden, Germany

Within the last few years organic memory devices have attracted considerable attention. Several different approaches for organic memory devices have been reported in literature. Some of them show remarkable device performance regarding the ON/OFF ratio and switching speed [1]. However, besides optimizing the performance of a single memory cell, it is further necessary to integrate the memory cell in a crossbar structure of top and bottom contacts to address the device properly and obtain high data storage density [2]. To avoid unwanted crosstalk between neighbouring elements in a passive matrix, the resistive memory element has to be combined with an organic diode. Here, we report on an approach to integrate an organic memory device [3] stacked with an organic diode element into a passive matrix structure. It is shown that the combination of an organic memory and a rectifying diode efficiently suppresses crosstalk in the crossbar. In order to increase the possible size of the crossbar array, the rectification ratio and the maximum forward current of the diode is increased. Furthermore, by optical lithography the possible integration density is raised.

[1] J. Scott, L. Bozano, Advanced Materials 19, 1452 (2007) [2] E. Teo et al., IEEE Electron Device Letters 30, 487 (2009) [3] F. Lindner, K. Walzer, K. Leo, Applied Physics Letters 93, 233305 (2008)