Regensburg 2010 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 29: Poster: Molecular Spintronics, Biomolecular and Functional Organic Layers, Organic Electronics and Photovoltaics, Plasmonics and Nanophotonics, Organic Thin Films, Nanoengineered Thin Films, Thin Film Characterisation,

DS 29.27: Poster

Mittwoch, 24. März 2010, 15:00–17:30, Poster A

Charge transport across Zinc Oxide Field Effect Transistors — •Daniel Walker, Christopher Siol, Christian Meltzer, and Heinz von Seggern — Electronic Materials Department, Institute of Materials Science, Technische Universität Darmstadt, Petersenstraße 23, 64287 Darmstadt, Germany

Zinc-Oxide is a highly attractive material for next generation electronic products as it is low cost and exhibits n-type semi-conducting properties and thus can be used in the fabrication of thin film field effect transistors; however the mechanism underlying the electronic behaviour remains poorly understood. This poster will present work examining the charge flow through spin coated Zinc-oxide FET by measurement of the surface potential using an ultra high-vacuum Kelvin-Probe force microscopy technique combined with a conventional voltage-current characterisation of the FET. A typical potential drop from the source to drain has been observed and is presented as a surface potential profile related to the position in the channel. Furthermore topographic data will be presented alongside a surface potential map in order to discern the effects of surface features on the charge-transport properties.