Regensburg 2010 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 29: Poster: Molecular Spintronics, Biomolecular and Functional Organic Layers, Organic Electronics and Photovoltaics, Plasmonics and Nanophotonics, Organic Thin Films, Nanoengineered Thin Films, Thin Film Characterisation,

DS 29.35: Poster

Mittwoch, 24. März 2010, 15:00–17:30, Poster A

Interface recombination effect in modelling the photoelectrical characteristics of P3HT:PCBM bulk heterojunction solar cells — •Jȩdrzej Szmytkowski — Institut für Angewandte Physik, Universität Karlsruhe (TH), Karlsruhe, Germany

The interface recombination of charge carriers located in the material with lower permittivity [1] has been implemented for the first time to calculate the electrical characteristics of donor–acceptor P3HT:PCBM bulk heterojunction solar cell. In order to estimate the photocurrent density in this system, a simple analytical formula has been derived. Theoretical I–V characteristics agree well with experimental data obtained in different laboratories. The conclusion is that the major contribution to the recombination in P3HT:PCBM blend is from the interface recombination with negligible contribution from the Langevin–type recombination. However, other processes could be also taken into account to explain the reduction of Langevin–type recombination. We suggest that the Braun–Onsager model cannot be used in the case when both materials in the blend are characterized by different permittivities.

[1] J. Szmytkowski Chem. Phys. Lett. 470 (2009) 123