Regensburg 2010 – scientific programme

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DS: Fachverband Dünne Schichten

DS 29: Poster: Molecular Spintronics, Biomolecular and Functional Organic Layers, Organic Electronics and Photovoltaics, Plasmonics and Nanophotonics, Organic Thin Films, Nanoengineered Thin Films, Thin Film Characterisation,

DS 29.4: Poster

Wednesday, March 24, 2010, 15:00–17:30, Poster A

Model supported generation of Reflection Anisotropy Spectra of copper phthalocyanine films on isotropic and anisotropic silicon substrates — •Falko Seidel, Li Ding, and Dietrich R. T. Zahn — Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany

Reflection Anisotropy Spectroscopy (RAS) and Spectroscopic Ellipsometry (SE) are two techniques which measure the change in polarization after reflection of light at a sample surface. The main difference between them is the fact that in RAS an incidence angle near 0^∘ is used while in SE the angle of incidence is usually in range close to the Brewster angle. Eventually the real and imaginary part of the RA spectra can be transformed into the well known Ψ and Δ values obtained from SE. Hence, the evaluation procedure of RA spectra can be performed in a similar way as for SE. Since interference enhances the RA signal of thin films, the measurements can lead to incorrect interpretation of features when interference comes into play. For this reason in this work a simulation of anisotropic copper phthalocyanine films on flat Si(111), vicinal Si(111) with 6^∘ off-cut angle, and on a Si(110) substrate is performed. The main aim is to get an idea about the origin of the RAS features if the substrate is also anisotropic. The results allow real anisotropy features and interference induced ones to be distinguished.