Regensburg 2010 – scientific programme

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DS: Fachverband Dünne Schichten

DS 3: Organic Electronics and Photovoltaics I (Joint Session DS/CPP/HL/O)

DS 3.1: Talk

Monday, March 22, 2010, 10:15–10:30, H8

Colour tuneable light-emitting transistor — •Eva J. Feldmeier, Christian Melzer, and Heinz von Seggern — Electronic Materials Department, Institute of Materials Science Technische Universität Darmstadt, Petersenstraße 23, 64287 Darmstadt, Germany

In recent years the interest in ambipolar organic light-emitting field-effect transistors has increased steadily as the devices combine switching behaviour of transistors with light emission. Usually, small molecules and polymers with a band gap in the visible spectral range serve as semiconducting materials. Mandatory remain balanced injection and transport properties for both charge carrier types to provide full control of the spatial position of the recombination zone of electrons and holes in the transistor channel via the applied voltages. As will be presented here, the spatial control of the recombination zone opens new possibilities towards light-emitting devices with colour tuneable emission.

In our contribution an organic light-emitting field-effect transistors is presented whose emission colour can be changed by the applied voltages. The organic top-contact field-effect transistor is based on a parallel layer stack of acenes serving as organic transport and emission layers. The transistor displays ambipolar characteristics with a narrow recombination zone within the transistor channel. During operation the recombination zone can be moved by a proper change in the drain and gate bias from one organic semiconductor layer to another one inducing a change in the emission colour. In the presented example the emission maxima can be switched from 530 nm to 580 nm.