Regensburg 2010 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 3: Organic Electronics and Photovoltaics I (Joint Session DS/CPP/HL/O)
DS 3.5: Vortrag
Montag, 22. März 2010, 11:15–11:30, H8
In-situ Analysis of Charge Carrier Mobility in Field Effect Transistors During Organic Semiconductor Deposition — •Christopher Keil, Dominik Klaus, Jan Hartel, and Derck Schlettwein — Institute of Applied Physics, Justus-Liebig-University Giessen, Germany. email:schlettwein@uni-giessen.de
Films of F16PcCu prepared by physical vapour deposition under high vacuum conditions were characterized in situ during the growth from the monolayer range up to about 100 nm. The charge carrier mobility in the linear and saturation region as well as the threshold voltage were investigated in real time at deliberate film thickness by help of a real time analysis software routine. The organic films were deposited on thermally grown silicon oxide which also acts as gate dielectric. The underlying Si wafer served as a bottom gate electrode and structured inter-digital metal source- drain contacts were prepared by photolithography. Different channel lengths and widths as well as different metal contacts were used to determine the influence of semiconductor/metal contacts on the characteristics of the field effect transistors.