Regensburg 2010 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 3: Organic Electronics and Photovoltaics I (Joint Session DS/CPP/HL/O)

DS 3.9: Vortrag

Montag, 22. März 2010, 12:15–12:30, H8

Experimental study and time dependent modeling of OFETs with solid electrolyte gate dielectrics — •Katharina Schätzler¹, Klaus Schmidt¹, Walter Fix¹, Gottfried Döhler¹, and Heiko Weber² — ¹PolyIC GmbH & Co. KG, Fürth — ²Lehrstuhl für Angewandte Physik, Friedrich-Alexander-Universität, Erlangen

We successfully investigated and simulated organic field effect transistors (OFETs) with a solid organic insulator containing ionic salt. It is already well known that electrolytes as gate dielectrics in OFETs offer low operating voltages by means of a high capacitance. Hence, the charge carrier density is increased in the channel region of the semiconductor. However, the drain-source current I_ds shows a strong time dependency because of the limited mobility of the ions. Consequently we developed a time dependent model for the spatial distribution of the ionic current within the insulator matrix. The ionic current of both cations and anions splits in a diffusion and a drift process. The model very precisely reproduces the time as well as the ion concentration dependency of I_ds. Parameters like ion and semiconductor mobility are extracted and are in good agreement with parameters extracted from experimental OFET and capacitance characteristics.