Regensburg 2010 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 38: Layer Properties: Electrical, Optical and Mechanical Properties

DS 38.7: Vortrag

Donnerstag, 25. März 2010, 15:30–15:45, H8

SnSe₂: An XAS study on the atomic and electronic structure — •Peter Zalden¹, Julia van Eijk¹, Carolin Braun², Wolfgang Bensch², Matthieu Micoulaut³, and Matthias Wuttig¹ — ¹I. Physikalisches Institut (IA), RWTH Aachen, 52056 Aachen — ²Institut für Anorganische Chemie, Univ. Kiel, 24118 Kiel — ³Lab. de Physique Théorique de la Matière Condensée, UPMC, Paris 6

Phase-change materials (PCMs) show remarkable properties from a scientific and technological point of view: They are employed in non-volatile memory applications, while the general motif of the fast crystallization mechanism is still under investigation. Data storage with PCMs is based on different optical reflectivities and electronic resistivites of the metastable amorphous and crystalline phases. Although being employed in devices, several PCMs are chemically unstable, thus limiting the number of switching cycles.

In this study, SnSe₂, a rather uncommon candidate for PCMs has been investigated because of the stability of its crystalline and amorphous phases. Therefore, long data retention as compared to other PCMs should be possible. EXAFS measurements have been performed on both K absorption edges of the amorphous and crystalline phases, resulting in structural models for both phases. Although SnSe₂ has a small contrast in reflectivity, the electronic conductivity changes by several orders of magnitude. This might enable the application in case of a lower demand for write speed.