Regensburg 2010 – scientific programme

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DS: Fachverband Dünne Schichten

DS 38: Layer Properties: Electrical, Optical and Mechanical Properties

DS 38.8: Talk

Thursday, March 25, 2010, 15:45–16:00, H8

Preparation and characterization of CuCrO₂ — •Christina Polenzky, Kai Ortner, and Bernd Szyszka — Fraunhofer IST, Bienroder Weg 54E, 38108 Braunschweig, Germany

Transparent conductive oxides (TCOs) are promising materials for future application in the field of transparent electronics. The still existing lack of p-TCOs results from different reasons. Firstly, delafossites need high temperatures (> 800 ^∘C) for crystallization which makes the coating difficult for most of the substrates used in industry. Secondly, as state of the art, the carrier concentration (n) and mobility (µ) are too low for suitable application.

In our work, we present results of the preparation and characterization of CuCrO₂. The synthesis of these materials from the gas phase by PVD will be demonstrated: The hollow cathode gas flow sputtering process is used for these materials for the first time. The dependency of the correct stoichiometry from gas flow and target composition is shown. Post-preparation annealing leads to better results by using a special atmosphere. So, the synthesis temperature is lowered for CuCrO₂ below 700 ^∘C. CuCrO₂ shows p-type conductivity because of a positive Seebeck coefficient of +477 µV/K. Furthermore, our delafossite materials reach transparencies up to 70 % in the visible spectrum of light.

With our work, we are able to improve the preparation of p-type TCOs and to bring them on the way into the future of transparent electronics.