Regensburg 2010 – scientific programme
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DS: Fachverband Dünne Schichten
DS 38: Layer Properties: Electrical, Optical and Mechanical Properties
DS 38.9: Talk
Thursday, March 25, 2010, 16:00–16:15, H8
Electrical transport in Al-doped ZnO/Ag/Al-doped ZnO multilayer systems — •Martin Philipp1,2, Christian Hess1, Hartmut Vinzelberg1, Bernd Büchner1, Hadia Gerardin2, and Jacques Jupille3 — 1Leibnitz-Institute for Solid State and Materials Research IFW Dresden, 01171 Dresden, Germany — 2Saint-Gobain Recherche, F-93303 Aubervilliers Cedex, France — 3Institut des NanoSciences de Paris, Université Paris 6, CNRS UMR 7588, F-75015 Paris, France
Al-doped ZnO/Ag/Al-doped ZnO layer stacks are widely used as low-emissivity coatings for building glazing due to their high reflectance in the infrared and high transmittance in the visible spectrum. For a fundamental understanding of their physical properties the layer stacks, which were produced by magnetron sputtering, have been investigated by means of electrical transport and Hall effect measurements. The resistivity was measured in dependence of temperature and magnetic field on layer stacks of different silver film thicknesses. The results were analyzed using different thin film resistivity models in order to understand the basic scattering mechanisms inside the films. Furthermore the effect of annealing was studied.