Regensburg 2010 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 39: Layer Deposition Processes & Layer Growth

DS 39.2: Vortrag

Donnerstag, 25. März 2010, 17:15–17:30, H8

Atomic layer deposition of HfO₂ onto SiO₂ substrates investigated in-situ by non-contact UHV/AFM — •Krzysztof Kolanek, Konstantin Karavaev, Massimo Tallarida, and Dieter Schmeisser — Brandenburgische Technische Universität, LS Angewandte Physik-Sensorik, Konrad-Wachsmann-Allee, 17, 03046, Cottbus, Germany

We investigated in-situ the atomic layer deposition (ALD) of HfO₂ onto SiO₂ substrates with ultra high vacuum (UHV) non-contact atomic force microscope (NC-AFM). The ALD process was started after detailed analysis of the initial Si(001)/SiO₂ substrate. The ALD cycles, made by using tetrakis-di-methyl-amido-Hf (TDMAHf) and water as precursors, were performed on the SiO₂ substrate maintained at 230 ^∘C. We studied the relation between the film growth and the root mean square surface roughness, surface skewness, kurtosis, fractal dimension and correlation length. In the initial stages of the ALD process with our analysis of the surface height histograms we were capable of determination: HfO₂ layer thickness, surface coverage and surface roughness of a substrate and deposited material. Observation of the surface height histograms evolution during deposition allowed us to verify conformal and effective ALD growth on SiO₂ substrate. With this detailed analysis of the surface topography we confirmed the completion of the first HfO₂ layer after four ALD cycles.