Regensburg 2010 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 39: Layer Deposition Processes & Layer Growth
DS 39.3: Vortrag
Donnerstag, 25. März 2010, 17:30–17:45, H8
Epitaxial growth of FeAl films on Al2O3 by pulsed laser deposition — •Moritz Trautvetter, Ulf Wiedwald, and Paul Ziemann — Institut für Festkörperphysik, Universität Ulm
FeAl alloys at equiatomic composition are very interesting systems due to their chemical stability and their multiple magnetic properties depending on chemical ordering. For many applications thin films are desirable. We present a method to grow epitaxial FeAl thin films on differently-cut sapphire (0001),(1120),(1102) substrates by pulsed laser deposition. By varying the preparation temperature, the film morphology can be tuned from very smooth films (300 K) to column-like growth (900 K). Moreover, chemical ordering in the B2 structure can be achieved by film deposition at elevated temperatures or alternatively by post-annealing of smooth films deposited at ambient temperatures. The epitaxial relations were measured by X-ray diffraction and electron backscatter diffraction. The phase change from the bcc structure towards the B2 structure is accompanied by a ferromagnetic/paramagnetic phase transition. The magnetic properties of the different phases of the FeAl films are examined by SQUID magnetometry and AC-susceptibility.