DS 39: Layer Deposition Processes & Layer Growth
Donnerstag, 25. März 2010, 17:00–18:00, H8
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17:00 |
DS 39.1 |
Twin assisted growth of silicon on glass from low temperature solution and the onset of a morphological instability — •Robert Heimburger, Thomas Teubner, Nils Deßmann, Torsten Boeck, and Roberto Fornari
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17:15 |
DS 39.2 |
Atomic layer deposition of HfO2 onto SiO2 substrates investigated in-situ by non-contact UHV/AFM — •Krzysztof Kolanek, Konstantin Karavaev, Massimo Tallarida, and Dieter Schmeisser
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17:30 |
DS 39.3 |
Epitaxial growth of FeAl films on Al2O3 by pulsed laser deposition — •Moritz Trautvetter, Ulf Wiedwald, and Paul Ziemann
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17:45 |
DS 39.4 |
Modeling of the relaxation kinetics of metastable tensile strained Si:C alloys — •Felix Ulomek, Ina Ostermay, Thorsten Kammler, and Volker Mohles
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