Regensburg 2010 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 44: Organic Thin Films I
DS 44.5: Vortrag
Freitag, 26. März 2010, 11:15–11:30, H8
In Situ Spectroscopic Investigation of CuPc Thin Films Grown on Vicinal Si(111) — •Li Ding, Marion Friedrich, Ovidiu Gordan, and Dietrich R. T. Zahn — Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany
Spectroscopic ellipsometry (SE) and reflection anisotropy spectroscopy (RAS) [1] are both surface sensitive and non-destructive techniques. SE is used to determine the dielectric functions, from which the out-of-plane anisotropy of thin films can be deduced. RAS is capable to measure the very tiny in-plane anisotropy in the order of 10−3.
SE and RAS are employed simultaneously to monitor the growth process of Copper phthalocyanine (CuPc) thin films on passivated vicinal Si(111), in order to investigate the change in anisotropy and molecular orientation with increasing film thickness. The films were grown by organic molecular beam deposition (OMBD). The RAS features of CuPc are linearly dependent on the film thickness in the range of 30 nm, indicating a strong influence of the surface steps on the in-plane molecular alignment in the film. The in situ SE spectra are analyzed to investigate the change in the out-of-plane molecular orientation.
References
[1] P. Weightman, D. S. Martin, R. J. Cole, and T. Farrell, Rep. Prog. Phys. 68, 1251 (2005).