Regensburg 2010 – scientific programme

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DS: Fachverband Dünne Schichten

DS 9: Poster: Synthesis of Nanostructured Films by Self-organization, Thermoelectric Thin Films and Nanostructures, High-k and Low-k Dielectrics, Layer Deposition Processes, Layer Growth, Layer Properties, Application of Thin Films, Surface Modification, Hard and Superhard Coatings, Metal Layers

DS 9.17: Poster

Monday, March 22, 2010, 15:00–17:30, Poster D1

Electrical properties of phase change materials along the pseudo binary line between GeTe and SnTe analysed with temperature dependent Hall effect measurements — •Felix Lange, Hanno Volker, Carl Schlockermann, Jenni Karvonen, and Matthias Wuttig — RWTH Aachen University, I. Physikalisches Institut (IA), 52056 Aachen, Germany

Phase change materials are a class of materials that can be reversibly switched between an amorphous and a crystalline state. These two states exhibit characteristic differences in their physical properties such as the reflectivity and the electrical resistivity. By assigning these two states to the binary values 1 and 0 one can store information as already realized in optical data storage media like CD±RW and DVD±RW. The electrical induced switching within nanoseconds [1] makes PC- materials also interesting for non-volatile RAM applications. It is obvious that a comprehensive understanding of the electrical transport properties is crucial in order to match the low power requirements of the device. Therefore we have investigated electrical properties along the pseudo binary line between GeTe and SnTe by temperature dependent Hall effect measurements.

[1] G. Bruns et al. (2009). App. Phys. Lett. 95, 043108