Regensburg 2010 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

DS: Fachverband Dünne Schichten

DS 9: Poster: Synthesis of Nanostructured Films by Self-organization, Thermoelectric Thin Films and Nanostructures, High-k and Low-k Dielectrics, Layer Deposition Processes, Layer Growth, Layer Properties, Application of Thin Films, Surface Modification, Hard and Superhard Coatings, Metal Layers

DS 9.18: Poster

Monday, March 22, 2010, 15:00–17:30, Poster D1

Field effect in GeTe thin films — •Hanno Volker, Carl Schlockermann, Daniel Krebs, Jörn Riedel, and Matthias Wuttig — RWTH Aachen University, I. Physikalisches Institut (IA), 52056 Aachen, Germany

Phase change memory is a promising candidate to replace common memory technologies such as Flash and DRAM due to its fast switching and excellent scaling perspectives. To improve memory density even further, it was proposed to combine the switchable resistor and the cell selection transistor in a single device. Current control by applying gate voltages has been demonstrated in the works of Yin et al. for Ge₂Sb₂Te₅ [1].

Recently, switching within a few nanoseconds has been demonstrated on a different material, GeTe [2]. We therefore studied the field effect in thin films of amorphous GeTe. Dedicated transistor devices were prepared, and the transfer characteristics of these devices were measured as a function of temperature and film thickness. Furthermore, time-dependent behavior was observed and analyzed.

[1] Y. Yin et al. (2006). Japan. J. Appl. Phys. 45, 3238

[2] G. Bruns et al. (2009). App. Phys. Lett. 95, 043108