Regensburg 2010 – scientific programme

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DS: Fachverband Dünne Schichten

DS 9: Poster: Synthesis of Nanostructured Films by Self-organization, Thermoelectric Thin Films and Nanostructures, High-k and Low-k Dielectrics, Layer Deposition Processes, Layer Growth, Layer Properties, Application of Thin Films, Surface Modification, Hard and Superhard Coatings, Metal Layers

DS 9.26: Poster

Monday, March 22, 2010, 15:00–17:30, Poster D1

Thermal characterization of ZnS:SiO₂ — •Karl Simon Siegert, Carl Schlockermann, Philipp Merkelbach, Hanno Volker, and Matthias Wuttig — RWTH Aachen University, I. Physikalisches Institut (IA), 52056 Aachen, Germany

Phase change materials such as Ge₂Sb₂Te₅ or GeTe offer unique physical characteristics. Their strong changes in optical and electrical properties during their amorphous-crystalline phase transitions make them especially interesting for data storage applications [1]. The large contrast in reflectance between the amorphous and the fcc-phase of Ge₂Sb₂Te₅ is already technologically exploited in rewritable optical storage discs. As the switching between the amorphous and the crystalline state is induced by temperature, thermal characterization of the phase change material and all other surrounding materials is needed for further improvement of data storage devices. This work focuses on thin films of ZnS:SiO₂, a material, which is used for protective layers on top of the active phase change layer in optical storage media. We have created several samples of different thicknesses by sputter deposition and characterized them using AFM and XRR. Small gold wires were created on top of the sample by photo-lithography and were used to measure the cross-plane thermal conductivity with an AC-measurement technique.

[1] Wuttig et al. Nat. Mat. 6, 824 - 832 (2007)