Regensburg 2010 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 9: Poster: Synthesis of Nanostructured Films by Self-organization, Thermoelectric Thin Films and Nanostructures, High-k and Low-k Dielectrics, Layer Deposition Processes, Layer Growth, Layer Properties, Application of Thin Films, Surface Modification, Hard and Superhard Coatings, Metal Layers

DS 9.35: Poster

Montag, 22. März 2010, 15:00–17:30, Poster D1

Characterization of magnetron sputtered doped amorphous Silicon films — •Frank Nobis, Philipp Schäfer, Hartmut Kupfer, Frank Richter, and Dietrich R. T. Zahn — Institute of Physics, Chemnitz Univ. of Technol., 09107 Chemnitz, Germany

Thin film techniques provide excellent capabilities to develop low cost solar cell technologies using amorphous silicon (a-Si). From many research groups a substitutional doping of a-Si films was demonstrated. In contrast to the doping of mono-/polycrystalline Si the doping efficiency is very low, i.e. only a few percent of the chemically incorporated dopants are electrically active. Therefore, an improved doping efficiency is one of the main goals of current investigations.

We have used pulsed d.c. magnetron sputtering to deposit phosphorus- and boron-doped amorphous silicon films. Heavily doped monocrystalline Si targets (n⁺, p⁺) were sputtered using Ar and Ar/H process gas. The electrical properties and the chemical composition of the films have been characterized by four point probe measurements and secondary ion mass spectrometry (SIMS), respectively. The Raman spectroscopy yielded information about the film structure. The hydrogen incorporation into the Si films was determined by Fourier-transform infrared spectroscopy (FTIR). The film properties will be discussed with respect to the dopant incorporation and to the deposition process parameters.