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DS: Fachverband Dünne Schichten
DS 9: Poster: Synthesis of Nanostructured Films by Self-organization, Thermoelectric Thin Films and Nanostructures, High-k and Low-k Dielectrics, Layer Deposition Processes, Layer Growth, Layer Properties, Application of Thin Films, Surface Modification, Hard and Superhard Coatings, Metal Layers
DS 9.37: Poster
Monday, March 22, 2010, 15:00–17:30, Poster D1
Growth and characterization of a copper/cobalt heterostructure on Cu(100) — •Philipp Kloth, Martin Wenderoth, Henning Prüser, and Rainer G. Ulbrich — IV. Physikalisches Institut, Georg-August Universität Göttingen
The copper/cobalt/copper heterostructure is a long known system for the research on quantum well oscillations in thin films [1, 2]. Preparing this system one has to find a trade-off between flat interfaces and intermixing of Co and Cu. We performed a detailed structure analysis for every step of the growth sequence. In the need of sufficient flat interfaces and surfaces one must conduct additional annealing steps after each deposition process. To avoid intermixing the evaporation is done at 80 Kelvin. Low energy electron diffraction (LEED) experiments show an epitaxial deposition. In order to find the appropriate annealing temperature we analyze the surface with auger electron spectroscopy (AES) so that intermixing can be neglected. Scanning tunneling microscopy analysis indicates a successful preparation process: we observe large flat areas. But in comparison to our AES setup (SPECS ErLeed) high resolution STM topographies show that cobalt tends to intermix with the copper film even for rather low heating temperatures. This work is supported by the SFB 602 TP A3.
[1] J. E. Ortega et al., Phys. Rev. Lett. 69, 844 (1992)
[2] T. Uchihashi, Phys. Rev. B 78, 033402 (2008)