Regensburg 2010 – scientific programme

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DS: Fachverband Dünne Schichten

DS 9: Poster: Synthesis of Nanostructured Films by Self-organization, Thermoelectric Thin Films and Nanostructures, High-k and Low-k Dielectrics, Layer Deposition Processes, Layer Growth, Layer Properties, Application of Thin Films, Surface Modification, Hard and Superhard Coatings, Metal Layers

DS 9.39: Poster

Monday, March 22, 2010, 15:00–17:30, Poster D1

Structural and electrical properties of sol-gel derived Ge nanocrystals in thin SiO2 layers — •Sebastian Knebel, Agathi Kyriaikidou, Hartmut Bracht, Harald Rösner, and Gerhard Wilde — Institut für Materialphysik, WWU Münster, Wilhelm-Klemm-Str. 10, 48149-Münster, Germany

A sol-gel based method for the synthesis of germanium nanocrystals (Ge-nc) in thin amorphous silicon dioxide (SiO2) films on silicon is presented. The synthesis process consists of a wet chemical coating step of Si substrate wafers and annealing steps under both oxidizing and reducing atmosphere. Size, structure and local distribution of the Ge-nc were studied by means of conventional and high-resolution transmission electron microscopy (HRTEM).

The structural properties are dependent on the thickness of the thin film as well as on the temperatures and times used in the annealing steps. Analysis of the thin glass films with energy dispersive x-ray spectroscopy (EDX) shows that Ge migrates to both the Si substrate and the free SiO2 surface. Capacitance-voltage (CV) measurements reveal a hysteresis indicating a trapping of charges in the glass layer.