Regensburg 2010 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 9: Poster: Synthesis of Nanostructured Films by Self-organization, Thermoelectric Thin Films and Nanostructures, High-k and Low-k Dielectrics, Layer Deposition Processes, Layer Growth, Layer Properties, Application of Thin Films, Surface Modification, Hard and Superhard Coatings, Metal Layers

DS 9.50: Poster

Montag, 22. März 2010, 15:00–17:30, Poster D1

Thermoelectric properties of hot wall deposited thin SnS films — •Dzianis M. Unuchak¹, Vasil A. Ivanov², Valeriy F. Gremenok², and Klaus Bente¹ — ¹Institut für Mineralogie, Kristallographie und Materialwissenschaft, Universität Leipzig, Scharnhorststr. 20, 04275 Leipzig, Germany — ²State Scientific and Production Association "Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus", P. Brovka str., 19, 220072 Minsk, Belarus

Polycrystalline ingots of SnS was directly synthesized from a stoichiometric mixture of 99.999 % purity Sn and S in a vacuum-sealed quartz ampoule. Thin SnS films were deposited by hot wall technique on glass and molybdenum substrates under an ambient pressure of 5*10⁻⁶ mbar. The elemental composition of the obtained films was determined to be stoichiometric (SEM-EDX). The crystal structure and crystalline phases of the samples were studied by X-ray diffraction (Siemens D-5000 diffractometer with CuK_α radiation). The obtained films were polycrystalline, monophase in nature and had orthorhombic crystal structure. The films on glass were highly oriented along (001) plane whereas films on molybdenum showed SnS phase with different orientation. The as-prepared films show p-type electrical conductivity confirmed by the thermoelectric probe measurement. The value of Seebeck coefficient was about 1000 and 400 µV/K for films on glass and Mo, respectively.